Crocus Technology

Crocus Technology
Type Disciplines
Corporation General Engineering
Address Postal Code
5 Place Robert F-38025
City State / Province
Schuman Grenoble
E-mail Country
France
Web Phone
link +33-(0)4-38-12-10-70
Fax

"CROCUS was founded in 2004. The company closed a $17M (13.5 M€) first round of financing in May 2006. The investor group includes leading US, French and Swiss venture funds. CROCUS management team brings together over 100 years of combined successful magnetic and semiconductor industry experience."

NanoDimension Management Limited, Grand Cayman, is pleased to announce that NanoDimension Limited Partnership has invested into Crocus Technology SA, Grenoble (France). Crocus Technology, a company focusing on Magnetic Random Access Memories (MRAM), today announced the closing of its Series A round of funding totaling $17 million. The round’s participants include San Francisco-based Sofinnova Ventures (lead investor), Paris-based firms Ventech, CDC Entreprises Innovation, AGF Private Equity and Sofinnova Partners, as well as NanoDimension. Crocus will leverage its innovative technology with the goal to become the world leader in this exciting MRAM market.

The basic MRAM cell is the so-called Magnetic Tunnel Junction (MTJ) which consists of two magnetic layers sandwiching a thin (sub-nm) insulating layer (see Fig. 1). The magnetization of one of the layers, acting as a reference layer, is fixed and kept rigid in one given direction. The other layer, acting as the storage layer, can be switched under an applied magnetic field from parallel to antiparallel to the reference layer, therein inducing a change in the cell resistance. The corresponding logic state (""0"" or ""1"") of the memory is hence defined by its resistance state (low or high), monitored by a small read current.

A fully functional MRAM memory is based on a 2D array of individual cells, which can be addressed individually. In traditional architectures, each memory cell combines a CMOS selection transistor with a magnetic tunnel junction and three line levels, two of which are positioned in a cross point architecture (see figure 2). This technology has been used efficiently in the first generation of MRAM devices, developed so far with feature sizes greater than 0.13-0.18 µm.

Going further down the roadmap will require new architectures. CROCUS and its partner research centres SPINTEC and LETI have developed within the IST European program “NEXT” a unique technology protected by an broad IP portfolio. The CROCUS MRAM technology not only allows full scalability to technology nodes at 90nm and beyond, but also exhibits high speed, error-free addressing, reduced power consumption and radiation/magnetic field hardness.

Contact:  B. Schwarz, +33-(0)4-38-12-10-70, bschwarz@crocus-technology.com

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