Patrick Fay Ph.D

Fay, Patrick
Position Department / Business Unit
Associate Professor Department of Electrical Engineering
Institution Disciplines
University of Notre Dame Engineering Fabrication
City State / Provence
Notre Dame Indiana
Country Website
US link
(574) 631-4393

Research in Prof. Fay's laboratory focuses on the design, fabrication, and characterization of high speed electrical and optoelectronic devices for wireless and fiber optic communication systems.

Monolithic integration of optoelectronic components for future-generation high bit-rate optical communication systems and device technologies and designs for ultra-high-speed digital circuits are also being investigated. On-going projects include the design, fabrication, and characterization of monolithically integrated photoreceivers for fiber links with bit rates in excess of 40 Gb/s, and the implementation of high-speed logic and mixed-signal integrated circuits using resonant tunneling diodes and/or high electron mobility transistors (HEMTs). In addition, research into the fabrication and characterization of microwave structures and passive components compatible with silicon devices for critical high-speed interconnects is being conducted.


Ph.D., Electrical Engineering July 1996; M.S., Electrical Engineering May 1993, University of Illinois at Urbana-Champaign; B.S., Electrical Engineering May 1991

Career Highlights

Associate Professor, August 2003 to present
Assistant Professor, August 1997 to 2003
University of Notre Dame

* Established High Speed Circuits and Devices Laboratory featuring analog and digital electronic and optoelectronic device characterization to 50 GHz, variable-temperature device and circuit characterization, and low-frequency noise spectroscopy
* Established externally-funded research program in high-speed electronic and optoelectronic devices and circuits. Research emphasis on compound semiconductor devices, including HEMTs, HBTs, RTDs, and photodetectors, as well as circuit demonstrations of device technologies
* Developed and taught graduate-level course in optoelectronic devices and applications
* Developed advanced undergraduate/graduate level microwave circuit design and microwave measurements laboratory course and associated instructional Microwave Circuit Design and Measurements Laboratory
* Contributed to development of multidisciplinary first-year engineering course sequence

Visiting Assistant Professor, August 1996 to August 1997
Visiting Postdoctoral Research Associate, August 1996 to August 1997
University of Illinois at Urbana-Champaign

* Responsible for teaching undergraduate solid-state physics and devices course and integrated circuit technology course
* Investigated advantages and achievable performance of several approaches to monolithic integration for optoelectronic integrated circuit (OEIC) fabrication. OEICs for long-wavelength photoreceiver applications using p-i-n and MSM photodetectors and high electron mobility transistors (HEMTs) designed, fabricated, and characterized.

Research Assistant, August 1991 to July 1996
University of Illinois at Urbana-Champaign

* Designed, fabricated, and tested high-speed (>18 GHz) monolithic optical MSM/HEMT receivers for 1.55 µm wavelength fiber optics communication. Microwave circuit design completed using Hewlett-Packard's MDS circuit simulation package; RF characterization of discrete devices and complete system using both frequency- and time-domain methods
* Developed several lithographic processes for high-resolution electron-beam lithography suitable for fabrication of optoelectronic integrated circuits and monolithic microwave integrated circuits with Cambridge EBMF 10.5
* Characterized surface damage due to reactive-ion etching processing in InAlAs/InGaAs/InP heterostructure FETs and its impact on FET performance
* Developed silicon nitride-based passivation process for InAlAs/InGaAs heterostructure FETs, and characterized the effect of the process on device performance
* Developed and characterized several wet etches useful in the fabrication of integrated circuits in the InAlAs/InGaAs/InP material system
* Refined STM-induced oxidation of silicon (100) surface, and used it to modify NMOS device behavior


* IEEE Senior member, March 2002
* IEEE Outstanding Teacher Award, Dept. of Electrical Engineering, 1998-1999
* U.S. Patent #5,880,482 awarded for "Low Dark Current Photodetector," March 9, 1999

By this Researcher

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