James R. Heath Ph.D.
James R. Heath is an American chemist and a professor at the Department of Chemistry, Caltech. Heath is known for publishing an architecture demonstration of molecular computers, or moletronics. In moletronics, single molecules serve as switches, "quantum wires" a few atoms thick serve as wiring, and the hardware is synthesized chemically from the bottom up. It was published in the summer of 1999 by Heath, J. Fraser Stoddart (Chemist at UCLA) and their collaborators in the journal Science.When Heath was at Rice University, he ran the experimental apparatus that generated the first C60 molecules and, ultimately, won the Nobel Prize in Chemistry for the three senior members of the collaboration: Robert F. Curl and Richard E. Smalley of Rice University and Harold Kroto of the University of Sussex. EducationHeath graduated with a degree in Chemistry in 1984 from Baylor University in Texas. He completed his Ph.D. in Physics and Chemistry from Rice University in 1988.Career HighlightsFrom 1988 to 1991, he was a Miller Research Fellow at the Department of Chemistry, University of California, Berkeley. From 1991 to 1994, he was a Research Staff Member at IBM T.J. Watson Research Laboratory in Yorktown, New York. He joined the faculty at UCLA in 1994 and became Professor of Chemistry in 1997.AwardsSpiers Medal Royal Society (2005)Arthur K. Doolittle Award (2004) Scientific American Top 50 (2002) ISI Highly Cited Researcher (since 2002) Commendation from Governor Gray Davis (2002) Raymond and Beverly Sackler Prize in the Physical Sciences (2001) LA Business Journal Technologist of the Year (2001) Feynman Prize in Nanotechnology (2000) Jules Springer Prize for Applied Physics (2000) Fellow of the American Physical Society (1999) Vanity Fair Magazine Hall of Fame (1999) Seaborg Award (1997) Sloan Fellowship (1997) Packard Fellowship (1994) NSF-NYI Award (1994) Miller Fellowship (1988) Rice Univ. Graduate Award for the Discovery of C60, the fullerenes, and La @ C60 (1987) |
By this ResearcherRelated ContentChemistry and Physics of Carbon, Volume 30Written by distinguished researchers in carbon, the long-running Chemistry and Physics of Carbon series provides a comprehensive and critical overview of carbon in terms of molecular structure, intermolecular relationships, bulk and surface properties, and their behavior in an amazing variety of current and emerging applications, ranging from nanotechnology to environmental remediation. Volume 30 not only retains the high-quality content and reputation of previous volumes, but also complements them with reliable and timely coverage of the latest advances in the field. The first chapters analyze progressive approaches to controlling more precisely the structure, morphology, and surface properties of novel activated carbons. They cover methods using activating agents such as alkaline hydroxides as well as endo- and exotemplates made from zeolites, silica, and colloidal crystals. The third chapter examines techniques for characterizing carbon surface chemistry, including electrochemical, spectroscopic, and chromatographic methods. The fourth and final chapter compares the virtues of exfoliated graphite, carbonized fir fibers, carbon fiber felt, and charcoals in solving oil spill problems, a matter of increasing environmental concern. Emphasizing key experimental results, practical aspects, and cutting-edge applications in every chapter, Volume 30 is a vital resource for those developing new technologies such as drug delivery, adsorbents for oil/chemical spills, materials processing, high-performance nanocarbons, and energy storage and conversion devices, including lithium ion batteries, supercapacitors, and fuel cells. Compound Semiconductors 2004: Compound Semiconductors for Quantum Science and NanostructuresCompound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for the compound semiconductor research community since the first one held in 1966 at Edinburgh, UK under the name of 'International Symposium on Gallium Arsenide and related Compounds'. These proceedings provide an international perspective on the latest research and an overview of recent, important developments in III-V compounds, II-VI compounds and IV-IV compounds. In the total of 106 papers, notable progress was reported in the development of zinc oxide and spintronics. Steady advances were seen in traditional topics such as III-V based electronic and optoelectronic devices, growth and processing, and characterization. Novel research trends were observed in quantum structures, such as quantum wires and dots, which are promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications the book is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry and electronic and electrical engineering. Heath, James R.James R. Heath is an American chemist and a professor at the Department of Chemistry, Caltech.
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