Alan Seabaugh Ph.D.

Seabaugh, Alan
Position Department / Business Unit
Department of Electrical Engineering
Institution Disciplines
University of Notre Dame Engineering Nanomaterials Nanomanufacturing
City State / Provence
Notre Dame Indiana
Country Website
US link
Fax
(574) 631-4393

Seabaugh’s group explores new devices and circuits enabled by engineering at the nanoscale.

Of particular interest are high speed and low power transistors, tunneling devices, tunnel diode/transistor circuits, and nanomechanical devices. These devices are based on various materials systems including indium arsenide, indium phosphide, gallium nitride, silicon, and germanium.

Education

B.S. (1977), M.S. (1979), Ph.D. (1985) Electrical Engineering, University of Virginia

Career Highlights

University of Notre Dame (1999-2005): Current group: 11 graduate students, 1 undergraduate, and a post doc. A versatile nanoelectronics testing laboratory has been constructed based around a 110 GHz Agilent 8510XF network analyzer, two Cascade temperature-controlled wafer chucks, and semiconductor parameter and impedance analyzers (see www.nd.edu/~nano). Six courses have been developed in this period, including four graduate courses. Received the Department of Electrical Engineering Outstanding Teacher Award in 2001.

Raytheon/Texas Instruments (1986-1999): Responsible for development of resonant tunneling circuit technology (nanoelectronics) for digital and analog/mixed signal applications (5-100 GHz) and memory. Led group demonstrating first resonant tunneling analog-to-digital converter (4 bits, 3 GSps), demonstrated first integrated bipolar resonant tunneling transistor (RTT) full adder, co-demonstrated first room temperature current gain in tunnel-emitter hot electron transistor, co-demonstrated first bipolar quantum well RTT (BiQuaRTT), demonstrated first 9-state RT SRAM cell. Manager for four completed government programs: AFOSR/DARPA Silicon-Based Quantum MOS Technology Development (1996-1999), AFOSR Resonant Tunneling Transistor Logic (1989-1992), DARPA Quantum Transistors and Circuits (1991-1994), AFOSR/DARPA Oxide/Silicon/Oxide Resonant Tunneling (1995-1998). Principal Investigator: ARPA Resonant Tunneling Devices and Circuits program (1993-1997).

University of Texas at Dallas Visiting Lecturer: EE3301 Electrical Network Analysis (1987), EE6320 Semiconductor Device Theory (1988, 1996), EE3310 Electronic Devices (1989), EE6321 Advanced Semiconductor Device Theory (1997). Received the Teacher of the Year award from the student chapter of the IEEE 1989-1990.

National Bureau of Standards Electronics Engineer (1979-1986): NBS graduate research fellowship (1981-84). Developed electronic characterization methods and apparatus for GaAs, including resistivity, Hall-effect, deep-level transient spectroscopy, photocapacitance, and photocurrent measurement systems. Revised the ASTM standard method F76 for measuring resistivity and Hall effect.

Ph. D. thesis (1985): Transient photoresistance spectroscopy of deep levels in high resistivity semiconductors.
M.S. thesis (1979): GaAs liquid phase epitaxy for millimeter wave Schottky diodes.

Awards

TI Achievement Award for “Demonstration of the world’s first pseudomorphic bipolar quantum resonant tunneling transistor” (1988)
TI Achievement Award for “Demonstration of the world’s first room temperature resonant tunneling integrated circuit” (1992)
IEEE Computer Society Outstanding Paper Award (coauthored, 1994)
DARPA Sustained Superior Performance award (1997) and DARPA Outstanding Performance by a Project Manager award (1998). Teacher of the Year Award, student chapter of the IEEE (1989-1990).
Outstanding Teacher Award 2001.

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