Heteroepitaxy of Semiconductors Theory, Growth, and Characterization

Heteroepitaxy of Semiconductors Theory, Growth, and Characterization
Publication Type List Price
Reference $134.95 / £86.
Publication Date Imprint
01/31/2007 CRC
Disciplines ISBN
Electronics 9780849371950
Number of Pages Buy with discount
480 buy
   
view list

Description

Considered one of the top research fields in electronics materials today, heteroepitaxy of semiconductors refers to the single-crystal growth of one semiconductor on a different substrate. The application of heteroepitaxy has enabled the development of laser diodes, CD and DVD drives, fiber optic communication systems, high-frequency transistors, wireless communications systems, and high-brightness LEDs for lighting, automotive, and display applications.

Heteroepitaxy is now becoming an important technology for digital very-large scale integrated circuits (VLSICs) with the advent of SiGe electronics. This book covers the theory, growth, and characterization of heteroepitaxial cubic and hexagonal semiconductors. It includes practical examples as well as end-of-chapter problems, serving as an ideal reference for professionals and a practical textbook for graduate students.

Table of Contents

INTRODUCTION

PROPERTIES OF SEMICONDUCTORS
Introduction
Crystallographic Properties
Lattice Constants and Thermal Expansion Coefficients
Elastic Properties
Surface Free Energy
Dislocations
Planar Defects
Problems
References

HETEROEPITAXIAL GROWTH
Introduction
Vapor Phase Epitaxy (VPE)
Molecular Beam Epitaxy (MBE)
Silicon, Germanium, and Si1-xGex Alloys
Silicon Carbide
III-Arsenides, III-Phosphides, and III-Antimonides
III-Nitrides
II-VI Semiconductors
Conclusion
Problems
References

SURFACE AND CHEMICAL CONSIDERATIONS IN HETEROEPITAXY
Introduction
Surface Reconstructions
Nucleation
Growth Modes
Nucleation Layers
Surfactants in Heteroepitaxy
Quantum Dots and Self-Assembly
Problems
References

MISMATCHED HETEROEPITAXIAL GROWTH AND STRAIN RELAXATION
Introduction
Pseudomorphic Growth and the Critical Layer Thickness
Dislocation Sources
Interactions between Misfit Dislocations
Lattice Relaxation Mechanisms
Quantitative Models for Lattice Relaxation
Lattice Relaxation on Vicinal Substrates: Crystallographic Tilting of Heteroepitaxial Layers
Lattice Relaxation in Graded Layers
Lattice Relaxation in Superlattices and Multilayer Structures
Dislocation Coalescence, Annihilation, and Removal in Relaxed Heteroepitaxial Layers
Thermal Strain
Cracking in Thick Films
Problems
References

CHARACTERIZATION OF HETEROEPITAXIAL LAYERS
Introduction
X-Ray Diffraction
Electron Diffraction
Microscopy
Crystallographic Etching Techniques
Photoluminescence
Growth Rate and Layer Thickness
Composition and Strain
Determination of Critical Layer Thickness
Crystal Orientation
Defect Types and Densities
Multilayered Structures and Superlattices
Growth Mode
Problems
References

DEFECT ENGINEERING IN HETEROEPITAXIAL LAYERS
Introduction
Buffer Layer Approaches
Reduced Area Growth Using Patterned Substrates
Patterning and Annealing
Epitaxial Lateral Overgrowth (ELO)
Pendeo-Epitaxy
Nanoheteroepitaxy
Planar Compliant Substrates
Free-Standing Semiconductor Films
Conclusion
Problems
References

APPENDIX A: BANDGAP ENGINEERING DIAGRAMS
APPENDIX B: LATTICE CONSTANTS AND COEFFICIENTS OF THERMAL EXPANSION
APPENDIX C: ELASTIC CONSTANTS
APPENDIX D: CRITICAL LAYER THICKNESS
APPENDIX E: CRYSTALLOGRAPHIC ETCHES
APPENDIX F: TABLES FOR X-RAY DIFFRACTION
INDEX

Contributors

Author 1 Ayers, John E. University of Connecticut, Storrs, USA
by siebo last modified September 15, 2009 - 07:17
Document Actions

Features

  • Provides the first full-length book devoted to the underlying principles of heteroepitaxial growth and characterization
  • Offers convenient access to critical data for designing heteroepitaxial growth processes
  • Presents useful diagrams, constants, and data in six convenient appendices
  • Includes nearly 200 illustrations, numerous examples, and a valuable list of up-to-date references
  • Contains end-of-chapter problems to reinforce practical understanding