Nano and Molecular Electronics Handbook
Sergey Edward Lyshevski Rochester Institute of Technology
There are fundamental and technological limits of conventional microfabrication and microelectronics. Scaling down conventional devices and attempts to develop novel topologies and architectures will soon be ineffective or unachievable at the device and system levels to ensure desired performance. Forward-looking experts continue to search for new paradigms to carry the field beyond the age of microelectronics, and molecular electronics is one of the most promising candidates. The Nano and Molecular Electronics Handbook surveys the current state of this exciting, emerging field and looks toward future developments and opportunities.
Molecular and Nano Electronics Explained Explore the fundamentals of device physics, synthesis, and design of molecular processing platforms and molecular integrated circuits within three-dimensional topologies, organizations, and architectures as well as bottom-up fabrication utilizing quantum effects and unique phenomena.
Technology in Progress Stay current with the latest results and practical solutions realized for nanoscale and molecular electronics as well as biomolecular electronics and memories. Learn design concepts, device-level modeling, simulation methods, and fabrication technologies used for today's applications and beyond.
Reports from the Front Lines of Research Expert innovators discuss the results of cutting-edge research and provide informed and insightful commentary on where this new paradigm will lead. The Nano and Molecular Electronics Handbook ranks among the most complete and authoritative guides to the past, present, and future of this revolutionary area of theory and technology.
Table of ContentsMolecular and Nano Electronics. Device and System Level. Nanoscaled Electronics. BioMolecular Electronics and Processing. Molecular and Nano Electronics: Device-Level Modeling and Simulation. Index.
ContributorsContributor Murokh, Lev, Queens College of CUNY, Flushing, NY, USA Contributor Bandyopadhyay, Supriyo, Virginia Commonwealth University, Richmond, USA Contributor Grigoriev, Anton, Uppsula University, SWEDEN Contributor Meyyappan, M., NASA Ames Research Center, Moffett Field, California, USA Contributor Wang, Wenyong, Nat'l Institute of Standards and Technology, Maryland, USA Contributor Facci, Paolo, CNR-INFM-S3 Contributor Snider, Gregory L., Notre Dame University, Indiana, USA Contributor Stuart, Jeff, University of Connecticut, Storrs, USA Contributor Evers, Ferdinand, Forschungszentrum Karlsruhe Contributor Das, S., MITRE Corporation Contributor Speyer, Gil, Arizona State University, Arizona, USA Contributor Georgiev, Danko Dimchev, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa, Japan Contributor Bratkovsky, Alex M., HP Labs, Palo Alto, USA Contributor Ferry, David, Arizona State University, Tempe, USA Contributor Kanchibotla, Bhargava, Virginia Commonwealth University, Virginia, USA Contributor Metzger, Robert, University of Alabama, Alabama, USA Contributor Smirnov, Anatoly, Quantum Cat Analytics, Inc. Contributor Tuszynski, Jack A., University of Alberta, Edmonton, Canada Contributor Acebedo, Faustino Palmeo, University of Seville, SPAIN Contributor Alessandrini, Andrea, CNR-INFM-S3 Contributor Cerofolini, Gianfranco, STMicroelectronics Contributor Lent, Craig S., University of Notre Dame, Indiana Contributor Malysheva, Lyuba, Bogolvubov Inst. for Theoretical Physics, UKRAINE Contributor Onipko, Alexander, Linkoping University Contributor Orlov, Alexei, University of Notre Dame, Indiana, USA Contributor Akis, Richard, Arizona State University, Tempe, USA Contributor Glazebrook, James F., Eastern Illinois University, Charleston, USA Contributor Burke, Kieron, University of California, Irvine Contributor Garman, Pamela, The MITRE Corporation Contributor Hansen, Thorsten, Northwestern University Contributor Hatakeyama, Rikizo, Tohoku University Contributor Mujica, Vladimiro, Northwestern University, Evanston, Illinois, USA Contributor Ratner, Mark A., Northwestern University, Evanston, Illinois, USA Contributor Snider, Gregory L., Notre Dame University, Indiana, USA Editor 1 Lyshevski, Sergey Edward, Rochester Institute of Technology, New York, USA
by siebo — last modified September 14, 2009 - 14:44