Silicon Nanoelectronics

Shunri Oda Tokyo Institute of Technology
David Ferry Arizona State University
Silicon Nanoelectronics
Publication Type List Price
Reference $164.95 / £105
Publication Date Imprint
6/27/2005 CRC
Disciplines ISBN
Electronics 9780824726331
Number of Pages Buy with discount
328 buy
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Because the silicon process infrastructure is already in place and because of silicon's compatibility with current CMOS circuits, silicon nanodevices are positioned to become particularly important. Silicon Nanoelectronics examines recent developments of novel devices and materials that hold great promise for creating smaller and more powerful chips. Contributed by more than 20 leading researchers, the text offers extensive background information and considers issues such as quantum effects and ballistic transport and resonant tunneling in silicon nanotechnology. It also pays significant attention to the all-important silicon single electron transistors and the devices that utilize them.

Table of Contents

Physics of Silicon Nanodevices. Single Electron and Ballistic Tunneling Devices. Quantum Effect in Si Nanodevices. Logic Devices. Resonant Tunneling. SESO Memory Devices. PLES Devices. Memory Devices. Short Channel MOSFET. Architecture. FinFET.


Contributor Frank, D., IBM, Yorktown Heights, New York, USA Contributor Kawaura, Hisao, NEC Corporation, Japan Contributor Tabe, Michiharu, Shizuoka University, Japan Contributor Guo, L. J., University of Michigan, Ann Arbor, USA Contributor Tiwari, Sandip, Cornell University, Ithaca, New York, USA Contributor Nakazato, Kazuo, Cambridge University, England, UK Contributor Takahashi, Yasuo, Hokkaido University, Japan Contributor Hiramoto, Toshiro, University of Tokyo, Japan Contributor Mizuta, Hiroshi, Tokyo Institute of Technology, Japan Contributor Yano, Kazuo, System LSI Research Dept. Editor 1 Oda, Shunri, Tokyo Institute of Technology, Japan Editor 2 Ferry, David, Arizona State University, Tempe, USA
by siebo last modified September 14, 2009 - 13:32
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  • - Covers the most recent developments in silicon nanoelectronics
  • - Discusses a variety of silicon nanodevices, including single-electron devices, ballistic transistors, resonant tunneling devices, silicon nanowires, as well as new materials
  • - Provides current information on SESO Memory Devices, and Few Electron Devices and Memory Circuits
  • - Includes in-depth theoretical and practical information on scaling and scaling limits