Silicon Nanoelectronics
Shunri Oda
Tokyo Institute of Technology
David Ferry
Arizona State University
DescriptionBecause the silicon process infrastructure is already in place and because of silicon's compatibility with current CMOS circuits, silicon nanodevices are positioned to become particularly important. Silicon Nanoelectronics examines recent developments of novel devices and materials that hold great promise for creating smaller and more powerful chips. Contributed by more than 20 leading researchers, the text offers extensive background information and considers issues such as quantum effects and ballistic transport and resonant tunneling in silicon nanotechnology. It also pays significant attention to the all-important silicon single electron transistors and the devices that utilize them. Table of ContentsPhysics of Silicon Nanodevices. Single Electron and Ballistic Tunneling Devices. Quantum Effect in Si Nanodevices. Logic Devices. Resonant Tunneling. SESO Memory Devices. PLES Devices. Memory Devices. Short Channel MOSFET. Architecture. FinFET.ContributorsContributor Frank, D., IBM, Yorktown Heights, New York, USA Contributor Kawaura, Hisao, NEC Corporation, Japan Contributor Tabe, Michiharu, Shizuoka University, Japan Contributor Guo, L. J., University of Michigan, Ann Arbor, USA Contributor Tiwari, Sandip, Cornell University, Ithaca, New York, USA Contributor Nakazato, Kazuo, Cambridge University, England, UK Contributor Takahashi, Yasuo, Hokkaido University, Japan Contributor Hiramoto, Toshiro, University of Tokyo, Japan Contributor Mizuta, Hiroshi, Tokyo Institute of Technology, Japan Contributor Yano, Kazuo, System LSI Research Dept. Editor 1 Oda, Shunri, Tokyo Institute of Technology, Japan Editor 2 Ferry, David, Arizona State University, Tempe, USA |
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CRC Press — 2010 NanoScience and CleanTech catalog
