Spintronic Materials and Technology

Yongbing Xu York University
Sarah Thompson University of York
Spintronic Materials and Technology
Publication Type List Price
Reference $195.95 / £127
Publication Date Imprint
10/25/2006 Taylor & Francis
Disciplines ISBN
Electronics 9780849392993
Number of Pages Buy with discount
423 buy
   
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Description

Few books exist that cover the hot field of second-generation spintronic devices, despite their potential to revolutionize the IT industry.Compiling the obstacles and progress of spin-controlled devices into one source, Spintronic Materials and Technology presents an in-depth examination of the most recent technological spintronic developments.

Featuring contributions from active researchers and leading experts, the book chronicles the main research challenges in spintronics. It first depicts the different classes of materials systems currently under investigation for use in spintronic devices. The contributors also address issues concerning the operation of spintronic devices, such as the new principle for future devices that use spin-polarized current. This promises to enable switching of individual spin components of the device while avoiding crosstalk at the nanoscale. The book concludes with descriptions of both Si and III-V semiconductor-based spin transistors and the integration of spin technology with photonics.

The second-generation spintronic devices discussed in Spintronic Materials and Technology will not only improve the existing capabilities of electronic transistors, but will enable future computers to run faster and consume less power.

Table of Contents

SPINTRONIC MATERIALS AND CHARACTERIZATIONS. Magneto-Optical Studies of Magnetic Oxide Semiconductors. Synthesis and Characterization of Wide Band-Gap Semiconductor Spintronic Materials. Magnetic Properties of (Ga,Mn)As. Soft X-Ray Resonant Magnetic Scattering from Magnetic Nanostructures. The Effect for Ru Magnetization Switching and CPP-GMR Enhancement. The Spin Dependent Interfacial Transparency. SPIN TORQUE AND DOMAIN WALL MAGNETO RESISTANCE. Current-Driven Switching of Magnetization-Theory and Experiment. Domain Wall Scattering and Current-Induced Switching in Patterned Ferromagnetic Devices. Domain Wall Magnetoresistance in Magnetic Nanowires. Introduction to a Theory of Current-Driven Domain Wall Motion. SPIN-INJECTION AND SPIN DEVICES. Silicon-Based Spin Electronic Devices: Toward a Spin Transistor. Spin-LEDs: Fundamentals and Applications. Spin Photo-Electronic Devices Based on Fe and the Heusler Alloy Co2MnGa. Ballistic Spin Tranport across a Schottky Barrier Induced by Photoexcitation. Ferromagnetic Metal/III-V Semiconductor Hybrid Spintronic Devices. The Spin-Valve Transistor.

Contributors

Contributor Zhang, Rong, Nanjing University, China Contributor Xiu, Xiangqian, Nanjing University, China Contributor Xie, Zili, Nanjing University, China Contributor Zheng, Youdou, Nanjing University, China Contributor Sawicki, Maciej, Polish Academy of Sciences, Warszawa, Poland Contributor der Laan, Gerrit van, Magnetic Spectroscopy Group, Warrington, England Contributor Tezuka, N., Tohoku University, Sendai, Japan Contributor Abe, S., Tohoku University, Sendai, Japan Contributor Jiang, Y., Tohoku University, Sendai, Japan Contributor Inomata, K., Tohoku Universtiy, Sendai, Japan Contributor Xia, Ke, Chinese Academy Sciences, Beijing, China Contributor Edwards, D.M., Imperial College, London, England Contributor Lepadatu, Serban, University of York, England Contributor Kohnol, H., Osaka University, Toyonaka, Japan Contributor Dennis, Cindi L., NIST, Gaithersburg, Maryland, USA Contributor Gregg, John F., Walailak University, Thailand Contributor Sirisathitku, Chitnarong, Walailak University, Thailand Contributor Allen, William, University of Oxford, England Contributor Roy, W. Van, IMEC, Leuven, Belgium Contributor Dorpe, P. Van, Imec, Leuven, Belgium Contributor Motsnyi, V.F., Imec, Leuven, Belgium Contributor Borghs, G., Imec, Leuven, Belgium Contributor De Boeck, J., Imec, Leuven, Belgium Contributor Hickey, M., University of Cambridge, England Contributor Damsgaard, C.D., Denmark Technical University, Lyngby Contributor Holmes, S.N., Cambridge Research Lab, England Contributor Husmann, A., Cambridge Research Lab, England Contributor Farrer, I., University of Cambridge, England Contributor Lee, R.F., University of Cambridge, England Contributor Ritchie, D.A., University of Cambridge, England Contributor Hansen, J.B., Denmark Technical University, Lyngby Contributor Jacobsen, C.S., Denmark Technical University, Lyngby Contributor Wong, J., University of York, England Contributor Gehring, G.A, University of Sheffield, England, UK Contributor Behan, A.J, University of Sheffield, England, UK Contributor Blythe, H.J, University of Sheffield, England, UK Contributor Fox, A. M, University of Sheffield, UK Contributor Ibrahim, R.M, University of Sheffield, UK Contributor Mokhtari, A, University of Sheffield, UK Contributor Neal, J.R, University of Sheffield, UK Contributor Federici, F, NEST-CNR-INFM, Pisa, Italy Contributor Stamps, R.L, University of Western Australia, Australia Contributor Falloon, P.E, University of Western Australia, Australia Contributor Gopar, V, Institut de Physique et Chimie de Strasbourg, France Contributor Weinman, D, Institut de Physique et Chimie de Strasbourg, France Contributor Jalabert, R.A, Inst de Physique et Chime des Materiaux, Strasbourg, France Contributor Tatara, G, PRESTO, JST, Saitama, Japan Contributor Pugh, David, University of York, England, UK Contributor Loraine, Duncan, University of York, England, UK Contributor Jones, G.A.C, University of Cambridge, UK Contributor Pepper, M, University of Cambridge, UK Contributor Hirohata, A, University of Cambridge, UK Contributor Steinmuller, S.J, University of Cambridge, UK Contributor Bland, J.A.C, University of Cambridge, UK Contributor Jansen, Ron, University of Twente, The Netherlands Editor 1 Xu, Yongbing, The University of York, UK Editor 2 Thompson, Sarah, The University of York, UK
by siebo last modified September 14, 2009 - 14:22
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Features

  • - Presents the current state and future directions in spintronics
  • - Covers a wide range of topics in materials science, physics, device fabrication, characterization, and operation
  • - Discusses underlying theory, experimental results, characterization techniques, and device applications
  • - Details the search for new spintronic materials, including ferromagnetic metals and alloys, Heusler alloys and half-metallic oxides, and diluted magnetic semiconductors
  • - Characterizes the magnetic, structural, and spin-dependent transport properties of spintronic materials using different conventional laboratory-based techniques and more novel synchrotron radiation-based measurements