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Chapter 2: Pattern Transfer with Dry Etching Techniques
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Chapter 2: Pattern Transfer with Dry Etching Techniques
Introduction
Dry Etching: Definitions and Jargon
Plasmas or Discharges
Physics of DC Plasmas
Spatial Zones in the Glow Discharge
Paschen’s Law
Physics of RF Plasmas
Physical Etching: Ion Etching or Sputtering and Ion-Beam Milling
Introduction
Sputtering or Ion Etching
Ion-Beam Etching or Ion-Beam Milling
Etching Profiles in Physical Etching
Introduction
Faceting Due to Angle-Dependent Sputter Rate
Ditching or Trenching
Redeposition
Backscattering
Angular Distribution of Incident Ions
Physical Etching Summary
Plasma Etching (Radical Etching)
Introduction
Reactor Configurations
Reaction Mechanism
Loading Effects—Uniformity and Nonuniformity
Atmospheric Downstream Plasma Etching or Plasma Jet Etching
Ion Energy versus Pressure Relationship in a Plasma
Physical/Chemical Etching
Introduction
Energy-Driven Anisotropy
Inhibitor-Driven Anisotropy
Dopant Driven Anisotropy
Gas Compositions in Dry Etching
Simplifying Rules
Deep Reactive Ion Etching (DRIE)
Introduction
New Plasma Sources
Inductively Coupled Plasma
Electron Cyclotron Resonance
Common Problems Associated with DRIE
Silicon Grass or Black Silicon
Microloading
Vapor-Phase Etching without Plasma (XeF2)
Dry Etching Models—In Situ Monitoring
Comparing Wet and Dry Etching
Examples
2.1 Via Etching in Si
2.2 Single Crystal Reactive Etching and Metallization (SCREAM)
2.3 Post-CMOS Processing for High-Aspect-Ratio Integrated Silicon Microstructures
2.4. Dry Etching of Polymeric Materials
2.5. Combination Wet and Dry Etching
Problems