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Chapter 2: Pattern Transfer with Dry Etching Techniques

by siebo last modified March 31, 2008 - 01:40

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Chapter 2: Pattern Transfer with Dry Etching Techniques

Introduction

Dry Etching: Definitions and Jargon
  Plasmas or Discharges
  Physics of DC Plasmas
  Spatial Zones in the Glow Discharge
  Paschen’s Law
  Physics of RF Plasmas

Physical Etching: Ion Etching or Sputtering and Ion-Beam Milling
  Introduction
  Sputtering or Ion Etching
  Ion-Beam Etching or Ion-Beam Milling
  Etching Profiles in Physical Etching
    Introduction
    Faceting Due to Angle-Dependent Sputter Rate
    Ditching or Trenching
    Redeposition
    Backscattering
    Angular Distribution of Incident Ions
  Physical Etching Summary

Plasma Etching (Radical Etching)
  Introduction
  Reactor Configurations
  Reaction Mechanism
  Loading Effects—Uniformity and Nonuniformity
  Atmospheric Downstream Plasma Etching or Plasma Jet Etching
  Ion Energy versus Pressure Relationship in a Plasma

Physical/Chemical Etching
  Introduction
  Energy-Driven Anisotropy
  Inhibitor-Driven Anisotropy
  Dopant Driven Anisotropy
  Gas Compositions in Dry Etching
  Simplifying Rules

Deep Reactive Ion Etching (DRIE)
  Introduction
  New Plasma Sources
    Inductively Coupled Plasma
      Electron Cyclotron Resonance
  Common Problems Associated with DRIE
    Silicon Grass or Black Silicon
    Microloading

Vapor-Phase Etching without Plasma (XeF2)

Dry Etching Models—In Situ Monitoring

Comparing Wet and Dry Etching

Examples
  2.1 Via Etching in Si
  2.2 Single Crystal Reactive Etching and Metallization (SCREAM)
  2.3 Post-CMOS Processing for High-Aspect-Ratio Integrated Silicon Microstructures
  2.4. Dry Etching of Polymeric Materials
  2.5. Combination Wet and Dry Etching
 
Problems