NanoScienceWorks

Description

The semiconductor industry is undergoing a transition from the use of standard CMOS silicon to novel device structures that include carbon nanotubes, graphene, quantum dots and III-V materials. A must-read for anyone serious about future nanofabrication technologies, this book addresses the state of the art in nano devices for electronics. It explores exciting opportunities in emerging materials that will take system performance beyond what is offered by traditional CMOS-based microelectronics. The text features contributions from top international experts from industry and academia. Topics covered range from electrical propagation on carbon nanotubes to GaN HEMTs technology and applications.

Table of Contents

Table of Contents

Section I: Semiconductor Materials

• Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models, A. Maffucci, A.G. Chiariello, C. Forestiere, and G. Miano
• Monolithic Integration of Carbon Nanotubes and CMOS, H. Xie
• Facile, Scalable, and Ambient—Electrochemical Route for Titania Memristor Fabrication, S. Chaudhary and N.M. Neihart
• Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years, K.M. Alam and S. Pramanik

Section II: Silicon Devices and Technology

1. SiGe BiCMOS Technology and Devices, M. Racanelli and E. Preisler
2. Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm, A. Afzalian
3. Development of 3D Chip Integration Technology, K. Sakuma
4. Embedded Spin–Transfer–Torque MRAM, K. Lee
5. Nonvolatile Memory Device: Resistive Random Access Memory, P. Zhou, L. Chen, H. Lv, H. Wan, and Q. Sun
6. DRAM Technology, M.J. Lee
7. Monocrystalline Silicon Solar Cell Optimization and Modeling, J. Huang and V. Moroz
8. Radiation Effects on Silicon Devices, M. Bagatin, S. Gerardin, and A. Paccagnella

Section III: Compound Semiconductor Devices and Technology

1. GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology, S.-C. Shen, J.-H. Ryou, and R.D. Dupuis
2. GaN HEMTs Technology and Applications, G.I. Ng and S. Arulkumaran
3. Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors, C.-T. Lee
4. GaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High Power/High Temperature Devices, F. Medjdoub
5. GaAs HBT and Power Amplifier Design for Handset Terminals, K. Yamamoto
6. Resonant Tunneling and Negative Differential Resistance in III-Nitrides, V. Litvinov
7. New Frontiers in Intersubband Optoelectronics Using III- Nitride Semiconductors, P.K. Kandaswamy and E. Monroy

Features

• Outlines the materials and device structures needed for microelectronics to evolve into nanoelectronics
• Provides a complete review of the device architecture alternatives for the future nanotechnology
• Depicts the state of the art in nano devices, which include carbon nanotubes, graphene, and emerging silicon and III-V device structures
• Examines real market needs and barriers faced by current technology
• Features international contributors who offer wide geographical coverage and balanced perspectives

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