Nanoparticle Engineering for Chemical-Mechanical Planarization: Fabrication of Next-Generation Nanodevices

Nanoparticle Engineering for Chemical-Mechanical Planarization: Fabrication of Next-Generation Nanodevices
Publication Type List Price
Reference $149.95 / £89.00
Publication Date Imprint
February 2009 CRC
Disciplines ISBN
Nanoparticles Fabrication 9781420059113
Number of Pages Buy with discount
221 buy
   

Description

In the development of next-generation nanoscale devices, higher speed and lower power operation is the name of the game. Increasing reliance on mobile computers, mobile phone, and other electronic devices demands a greater degree of speed and power. As chemical mechanical planarization (CMP) progressively becomes perceived less as black art and more as a cutting-edge technology, it is emerging as the technology for achieving higher performance devices.

Nanoparticle Engineering for Chemical-Mechanical Planarization explains the physicochemical properties of nanoparticles according to each step in the CMP process, including dielectric CMP, shallow trend isolation CMP, metal CMP, poly isolation CMP, and noble metal CMP. The authors provide a detailed guide to nanoparticle engineering of novel CMP slurry for next-generation nanoscale devices below the 60nm design rule. They present design techniques using polymeric additives to improve CMP performance. The final chapter focuses on novel CMP slurry for the application to memory devices beyond 50nm technology.


Most books published on CMP focus on the polishing process, equipment, and cleaning. Even though some of these books may touch on CMP slurries, the methods they cover are confined to conventional slurries and none cover them with the detail required for the development of next-generation devices. With its coverage of fundamental concepts and novel technologies, this book delivers expert insight into CMP for all current and next-generation systems.

 

Table of Contents

Overview of CMP Technology
Motivation and Background
The Key Factors of CMP Process

Interlayer Dielectric CMP
Interlayer Dielectric (ILD) CMP Process
Rheological and Electrokinetic Behavior of Nano Fumed Silica Particle for ILD CMP
Particle Engineering for Improvement of CMP Performance
PAD Dependency in ILD CMP
ILD Pattern Dependencies

Shallow Trench Isolation CMP
Requirement for High Selectivity Slurry
Particle Engineering of Ceria Nanoparticles and Their Influence on CMP Performance
Chemical Engineering for High Selectivity in STI CMP
Force Measurement Using Atomic Force Microscopy for
Mechanism
Pattern Dependence of High-Selectivity Slurry

Copper CMP
Introduction
High Selectivity for Copper CMP
Copper CMP Pattern Dependence

Nanotopography
What Is Nanotopography?
Why Nanotopography Is Important
Impact of Nanotopography on CMP
Equipment in Measuring the Nanotopography

Novel CMP for Next-Generation Devices
The Progress of Semiconductor Devices upon Current Demand
Complementary Metal-Oxide Semiconductor (CMOS) Memory
Novel CMP for New Memory
References

Index

by Editor1 last modified October 18, 2009 - 10:58
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Features

  • Describes the materials science and engineering behind the CMP process
  • Provides a technology roadmap for the CMP process and slurries
  • Provides a detailed guide to nanoparticle engineering of novel CMP slurries for next-generation devices, below the 60 nm design rule
  • Describes design techniques of chemicals (organic molecules) according to the target films
  • Explains the relationship between material parameters (nanoparticle engineering and chemical engineering) and CMP performance, and provides the design techniques of novel CMP slurries for improving CMP performance.