Nanoparticle Engineering for Chemical-Mechanical Planarization: Fabrication of Next-Generation Nanodevices
DescriptionIn the development of next-generation nanoscale devices, higher speed and lower power operation is the name of the game. Increasing reliance on mobile computers, mobile phone, and other electronic devices demands a greater degree of speed and power. As chemical mechanical planarization (CMP) progressively becomes perceived less as black art and more as a cutting-edge technology, it is emerging as the technology for achieving higher performance devices.
Nanoparticle Engineering for Chemical-Mechanical Planarization explains the physicochemical properties of nanoparticles according to each step in the CMP process, including dielectric CMP, shallow trend isolation CMP, metal CMP, poly isolation CMP, and noble metal CMP. The authors provide a detailed guide to nanoparticle engineering of novel CMP slurry for next-generation nanoscale devices below the 60nm design rule. They present design techniques using polymeric additives to improve CMP performance. The final chapter focuses on novel CMP slurry for the application to memory devices beyond 50nm technology.
Most books published on CMP focus on the polishing process, equipment, and cleaning. Even though some of these books may touch on CMP slurries, the methods they cover are confined to conventional slurries and none cover them with the detail required for the development of next-generation devices. With its coverage of fundamental concepts and novel technologies, this book delivers expert insight into CMP for all current and next-generation systems.
Table of ContentsOverview of CMP Technology
Motivation and Background
The Key Factors of CMP Process
Interlayer Dielectric CMP
Interlayer Dielectric (ILD) CMP Process
Rheological and Electrokinetic Behavior of Nano Fumed Silica Particle for ILD CMP
Particle Engineering for Improvement of CMP Performance
PAD Dependency in ILD CMP
ILD Pattern Dependencies
Shallow Trench Isolation CMP
Requirement for High Selectivity Slurry
Particle Engineering of Ceria Nanoparticles and Their Influence on CMP Performance
Chemical Engineering for High Selectivity in STI CMP
Force Measurement Using Atomic Force Microscopy for
Pattern Dependence of High-Selectivity Slurry
High Selectivity for Copper CMP
Copper CMP Pattern Dependence
What Is Nanotopography?
Why Nanotopography Is Important
Impact of Nanotopography on CMP
Equipment in Measuring the Nanotopography
Novel CMP for Next-Generation Devices
The Progress of Semiconductor Devices upon Current Demand
Complementary Metal-Oxide Semiconductor (CMOS) Memory
Novel CMP for New Memory
by Editor1 — last modified October 18, 2009 - 10:58