Forscher entwickeln Graphen-Siliziumkarbid-Transistoren für integrierte Hochleistungselektronik

Read original story	Forscher entwickeln Graphen-Siliziumkarbid-Transistoren für integrierte Hochleistungselektronik
Description	Physiker der Friedrich-Alexander-Universität Erlangen-Nürnberg haben ein Verfahren entwickelt, mit dem sich aus Graphen und Siliziumkarbid leistungsfähige integrierte Schaltkreise herstellen lassen.
Imported on	28 Jul 2012, 10:59
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